KD4D8G16LABM DDR4 SDRAM

Overview

Product Overview

Selection Positioning

KD4D8G16LABM is a wide-temperature DDR4 SDRAM with 512Mb x16 organization, 8Gb total density, 2666Mbps speed grade and 1.2V supply, intended for embedded platforms that need stable bandwidth and supply continuity.

Internal Organization512Mb x16 organization, 8Gb total density

Bank Structure8 banks, 2 bank groups, 4 banks per group

Interface StandardJEDEC JESD-79-4 DDR4

Power RailsVDD/VDDQ=1.2V, VPP=2.5V

Package SizePBGA-96, approx. 13mm x 7.5mm

Compatibility ReferenceMT40A512M16TB

Key Features

Supports auto refresh, self refresh, LPASR low-power auto self refresh and MPSM maximum power-saving mode.
Supports command/address parity, write CRC, TEN connectivity test mode, plus hPPR and sPPR repair mechanisms.
Supports DBI, ZQ calibration, differential clock/data strobe inputs and on-die termination; IBIS models can support signal-integrity simulation.
Supports BL8 and Burst Chop BC4 for high-bandwidth parallel access.

Typical Applications

Suitable for storage expansion and replacement review on platforms such as Phytium FT2000/D2000/D3000 and Loongson 3A6000.
Used in industrial control, communications equipment, edge-computing boards and long-lifecycle wide-temperature systems.

Design-in Notes

Confirm host processor, FPGA or SoC interface support, voltage rails and package footprint constraints.
Before sample design-in, share schematic, PCB stack-up, clock/reset design, power sequencing and replacement part information.
For replacement projects, provide the original part number, operating temperature, speed grade, package constraints and lifecycle requirement.

Selection Support

For platform compatibility, replacement review, temperature range, package constraints or document status, please submit the target platform, expected volume and project phase. Kangda sales and FAE teams can follow up with that context.